 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Pb Free Plating Product ISSUED DATE :2006/01/10 REVISED DATE : G S C 7 8 11 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 12m 11.8A The GSC7811 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. *Simple Drive Requirement *Low On-resistance *Fast Switching Characteristic Description Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0 0.40 0.19 6.20 5.00 4.00 8 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 : ID @TA=70 : IDM PD @TA=25 : Tj, Tstg Ratings 25 12 11.8 9.4 30 2.5 0.02 -55 ~ +150 Unit V V A A A W W/ : : Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-amb Value 50 Unit : /W GSC7811 Page: 1/5 ISSUED DATE :2006/01/10 REVISED DATE : Electrical Characteristics (Tj = 25 : unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Symbol BVDSS BVDSS / Tj Min. 25 0.5 - Typ. 0.1 30 10 32 2.6 15.5 12 28 41 40 800 460 215 Max. 1.2 100 1 25 12 - Unit V V/ : V S nA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 : , ID=1mA VDS=VGS, ID=250uA VDS=15V, ID=11.8A VGS= 12V VDS=25V, VGS=0 VDS=20V, VGS=0 VGS=4.5V, ID=11.8A ID=11.8A VDS=20V VGS=5V VDS=15V ID=1.5A VGS=15V RG=3.3 RD=10 VGS=0V VDS=20V f=1.0MHz Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=70 : ) VGS(th) gfs IGSS IDSS RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Static Drain-Source On-Resistance Total Gate Charge 2 2 Gate-Source Charge Gate-Drain ("Miller") Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance nC ns pF Source-Drain Diode Parameter Forward On Voltage2 Continuous Source Current (Body Diode) Symbol VSD IS Min. - Typ. - Max. 1.2 2.08 Unit V A Test Conditions IS=2.3A, VGS=0V, Tj=25 : VD=VG=0V, VS=1.2V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 125 : /W when mounted on Min. copper pad. GSC7811 Page: 2/5 ISSUED DATE :2006/01/10 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Maximum Drain Current v.s. Case Temperature GSC7811 Fig 6. Type Power Dissipation Page: 3/5 ISSUED DATE :2006/01/10 REVISED DATE : Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristics of Reverse Diode GSC7811 Fig 12. Gate Threshold Voltage v.s. Junction Temperature Page: 4/5 ISSUED DATE :2006/01/10 REVISED DATE : Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GSC7811 Page: 5/5 |
Price & Availability of GSC7811
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |